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Samsung 4GB DDR3 PC3-12800 1600MHz 204-Pin SODIMM Laptop Memory Module RAM. Model M471B5273DH0-CK0
Crucial 8GB Kit (4GBx2) DDR3/DDR3L 1333 MT/s (PC3-10600) SODIMM 204-Pin Memory For Mac – CT2K4G3S1339M
CT2K2G3S1339M is a 8GB kit consisting of (2) 4GB DDR3 Notebook modules that operates at speeds up to 1333 MT/s and has a CL9 latency. It is dual voltage and can operate at 1.35V or 1.5V. It is Unbuffered and is non-ECC. It conforms to the industry standard SODIMM layout of 204 pins and is compatible with computers that take DDR3 SODIMM memory.
PC3-10600, DDR3 1333, ROYEMAI 8GB DDR3 Kit (2x4GB) RAM DDR3 PC3 10600S DDR3 8GB 2Rx8 204-pin 1333MHZ DDR3 1.5v 4GB DDR3 RAM Memory Upgrade for Laptop
- ? Notice:PC3-10600, DDR3 1333, Unbuffered, Dual Rank, Non ECC, 1.5V CL9, compatible with AMD, Intel, Mac system.
- ? Advanced Chips:All 4GB DDR3 are from Hynix IC /Original and high quality memory module.
- ? DDR3 RAM, 100% tested for stability, durability and compatibility.
- ? Please make sure your laptop model meets 8GB DDR3, May not work on all devices,Please clean the connection figure (Gold finger) gently with eraser.
- ? Guaranteed:RoHS Compliant,JEDEC Compliant.Lifetime warranty,contact [email protected] please ,free technical support.
HP VH641AT 4-GB DDR3 RAM (PC3-10600 , 1333 MHz)
Maximize your Business PC performance with HP Memory. Upgrading your memory is a cost effective way to boost your system performance without having to upgrade your processor.
Hynix 8GB 2 x 4GB PC3-10600S DDR3 1333 SODIMM Laptop Memory Kit Lenovo 55Y3717
Hynix 8GB 2 x 4GB PC3-10600S DDR3 1333 SODIMM Laptop Notebook Memory Kit
Lenovo 55Y3717
Specifications
• Manufacturer: Hynix
• Part Number: HMT351S6CFR8C-H9
• Memory Type: SODIMM
• Capacity: 8GB 2 x 4GB
• Pins: 204 Pin
• Bus Type: PC3-10600 DDR3
• Cycle Time: 1.5ns
• Cas: CL9
• Data Transfer Rate: 1333Mhz
• Memory Clock: 166Mhz
• Rank: Rank 2
• Voltage: 1.5
Crucial 16GB Kit (8GBx2) DDR3/DDR3L 1600 MT/S (PC3-12800) Unbuffered SODIMM 204-Pin Memory – CT2KIT102464BF160B
Patriot Signature 4 GB PC3-10600 (1333 MHz) DDR3 SODIMM Notebook Memory PSD34G13332S
Patriot Memory’s Signature Line DDR3 Non-ECC Unbuffered memory delivers the quality, reliability and performance expected for today’s computer needs. These 4GB modules are designed to run at PC3-10600 (1333MHz) at CAS 9 latency timings. Built using specific build-of-materials (BOMs) we ensure that every module meets and exceeds industry standards: offering you a hassle free upgrade. We certify every component that goes into our modules, including the modules themselves, which must pass strict standards to ensure compatibility, quality and reliability. With free customer service and a lifetime warranty, Patriot Memory’s Signature memory modules are a perfect system upgrade option.
DUOMEIQI 8GB Kit (2 X 4GB) 2RX8 PC3-12800 PC3-12800S DDR3 1600MHz SO-DIMM CL9 204 Pin 1.5v Non-ECC Unbuffered Laptop Memory Notebook RAM Module for Intel AMD and Mac Computer
- ?Model: 1600MHz DDR3 PC3-12800S 2RX8 CL11 204-Pin 1.5v Non-ECC, Unbuffered Dual Rank Memory Module. ( This is DDR3 RAM, normal voltage 1.5v. If need 1.35v RAM, please choose PC3L-12800S from our shop)
- ?IC: From big brand, Hynix or Samsung, a high level of reliability.
- ?For Selected Acer , Alienware , AOpen , ASRock , ASUS/ASmobile , BCM , Biostar , Clevo , Dell , DFI , EliteGroup (ECS) , Foxconn , Fujitsu , Gateway , Getac , Gigabyte , HP/Compaq , Intel , Lenovo , LG Electronics , MEDION , MSI , NEC , Packard Bell , Panasonic , Portwell , QNAP , Samsung , Shuttle , Sony , Supermicro , Synology , Toshiba , Twinhead , ZOTAC
- ?For Apple MacBook Pro Mid 2012 13/15 inch, iMac Late 2012 Early/Late 2013 Late 2014 Mid 2015 21.5/27 inch, Mac Mini Late 2012
- ?Guaranteed – Life Time warranty – [email protected]
Timetec Hynix IC 16GB KIT(2x8GB) Compatible for Apple DDR3 1333MHz PC3-10600 for MacBook Pro (Early/Late 2011 13/15/17 inch), iMac(Mid 2010, Mid/Late 2011 21.5/27 inch), Mac Mini(Mid 2011) RAM Upgrade
- NOTE: iMac Mid 2010 27 inch iMac 11,3 (3.2 GHz) and 21.5 inch iMac 11,2 (3.06 GHz/ 3.2 GHz/ 3.6 GHz) ONLY SUPPORT 4GB, DO NOT SUPPORT 8GB.
- Designed for Apple MacBook Pro -13 inch / 15 inch / 17 inch Early 2011, 13 inch / 15 inch / 17 inch Late 2011 – MacBookPro8,1 MacBookPro8,2 MacBookPro8,3
- Designed for Apple iMac – 27 inch Mid 2010, 21.5 inch / 27 inch Mid 2011, 21.5 inch Late 2011- iMac11,3 iMac12,1 iMac12,2
- Designed for Apple Mac Mini – Mid 2011 – MacMini5,1 MacMini5,2 MacMini5,3
- DDR3 1333MHz PC3-10600 204 Pin Unbuffered Non-ECC 1.5V CL9 Dual Rank 2Rx8 based 512×8 Module Size: 8GB Package: 2x8GB Guaranteed – Lifetime warranty from Purchase Date Free technical support ([email protected])
Patriot 1.35V 4GB DDR3 1600MHz PC3-12800 CL11 SODIMM Memory PSD34G1600L2S
- PC3-12800 (1600MHz) Data Rate
- 204-Pin Dual in-line memory module
- Non-ECC Unbuffered SODIMM
- 3 Rank Double Sided Module
- 7.8US Refresh Interval (8192 CYCLES/64MS)
- 1.35V Power Requirement
- 100% Tested and RoHS Compliant
- Works with Intel 3rd Generation mobile processors as well as AMD A Series mobile processors
Product Description
Patriot’s Memory for Ultra book SODIMM modules are the perfect, no hassle upgrade for any Ultra book class notebook. Compatible with Intel’s 3rd generation mobile processors and running at just 1.35 volts, these SODIMM modules are optimized for ultra low power consumption providing extremely efficient performance. Patriot’s Memory for Ultra book is built from the highest quality, components and hand tested offering consumers rock-solid plug and play performance for the most demanding mobile applications. Compatible with Windows 7, Windows Vista, Windows XP, Windows 2000, Windows ME, Linux 2.4 and later, Mac OS 9, X and later, Patriot’s Memory for Ultra book modules are backed by a limited lifetime warranty and Patriot Memory’s award winning customer support.
From the Manufacturer
Signature DDR3 SODIMM Upgrade For Ultrabooks
Patriot’s Memory for Ultrabook SODIMM modules are the perfect, no-hassle upgrade for any Ultrabook-class notebook. Compatible with Intel’s 3rd generation mobile processors and running at just 1.35 volts, these SODIMM modules are optimized for ultra-low power consumption providing extremely efficient performance.
Specially Designed for Ultrabooks
Providing the most dynamic and powerful mobile computing platform, the Ultrabook delivers the highest levels of portability, performance, and entertainment. The Ultrabook is truly redefining the mobile computing experience. With this in mind, Patriot’s Memory for Ultrabook SODIMM modules were designed to offer the perfect performance enhancement to the Ultrabook ecosystem.
Ultra-Low Power
Running at just 1.35 volts, the Memory For Ultrabook SODIMM modules are optimized to deliver energy efficient performance. Through the use of ultra-low power (ULP) memory chips, these modules deliver lower operating temperatures to ensure surrounding components run optimally. The modules are backwards compatible with 1.5 volt standards for wider compatibility.
High Quality Fixed Build of Materials
Patriot’s Memory For Ultrabook SODIMM modules are built from the highest quality components and hand tested offering consumers rock-solid plug and play performance for the most demanding mobile applications. These kits are also backed by Patriot Memory award winning customer support.
Available in 4GB and 8GB
Ultrabook SODIMM Modules are available in 4GB and 8GB modules, with frequencies of 1333MHz and 1600MHz, giving you the memory you need for critical multitasking with your laptop. The 204-Pin Dual In-Line Memory Module fits Ultrabooks from most major manufacturers, making installation easy.
Works with the Latest Technologies
Patriot’s Ultrabook-class memory modules are compatible with Intel’s latest generation of processors, including the i3, i5, and i7 series. Combined with auto and self-refresh capabilities, Serial Presence-Detect (SPD), and wide compatibility with easy installation, these memory modules are the ideal upgrade to get more real-world performance out of your Ultrabook.
Intel and Ultrabook are trademarks of Intel Corporation in the U.S. and/or other countries.
Conclusion
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